As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation.
Publication type:Research Problem
Published:
Language:English
Licence:
CC BY 4.0
Peer Reviews (This Version): (0)
Red flags:
(0)
Actions
Download:
Sign in for more actionsSections
Research topics above this in the hierarchy
Funders
No sources of funding have been specified for this Research Problem.
Conflict of interest
This Research Problem does not have any specified conflicts of interest.